* Fast speed (t f=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5302] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specificati
C5302
Sanyo Semicon Device
166.48 KB
2sc5302.
Ordering number:EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
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