* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter
C5303
Sanyo Semicon Device
39.32 KB
2sc5303.
Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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