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C5307 2SC5307

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Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm * High breakdown voltage: V.

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Applications

* 2SC5307 Unit: mm
* High breakdown voltage: VCEO = 400 V
* Low saturation voltage: VCE (sat) = 0.4 V (typ. ) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur

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2SC5307 Toshiba
Toshiba C5307-like datasheet