Package Dimensions
unit : mm 2174A
[2SC5811]
16.0
5.0
High speed. High breakdown voltage : VCBO=1600V. High reliability(Adoption of HVP process). Adoption of MB
✔ C5811 Application
Features
Package Dimensions
unit : mm 2174A
[2SC5811]
16.0
5.0
High speed. High breakdown voltage
C5812, Hitachi Semiconductor
2SC5812
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0 Nov. 2001
Features
• High power gain, Low noise figure at low power .
C5813, Panasonic
Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
Unit: mm
■ Features
• Low collector-emitter saturation voltage VCE(sat) •.
C5802D, Fairchild Semiconductor
KSC5802D
KSC5802D
High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode)
• • .. • • High Breakdown Voltage .
