* Package Dimensions unit : mm 2174A [2SC5811] 16.0 5.0 High speed. High breakdown voltage : VCBO=1600V. High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications
C5811
Sanyo Semicon Device
29.43 KB
2sc5811.
Ordering number : ENN7415 2SC5811 NPN Triple Diffused Planar Silicon Transistor 2SC5811 Ultrahigh-Definition CRT Display Horizontal Deflection Outpu.
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