C5888 - 2SC5888

Sanyo Semicon Device

Datasheet Details

es Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

📁 C5888 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Sep 15, 2006 |