C5886 Datasheet - Toshiba Semiconductor

C5886 2SC5886

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Bas.

C5886-ToshibaSemiconductor.pdf