C5819 Datasheet - Toshiba Semiconductor

C5819 2SC5819

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter .

C5819-ToshibaSemiconductor.pdf