* Adoption of FBET, MBIT processes.
* High current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* Ultrasmall package permitting applied sets to be made small and slim (0.9mm).
* High allowable power dissipation. 0.05 1.6 2.8 1 2 ( )
CPH6202
Sanyo Semicon Device
187.68 KB
High-current switching applications.
Ordering number:ENN5807
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6103/CPH6203
High-Current Switching Applications
Applications
* DC-DC co.
📁 Related Datasheet
CPH6201 High-Current Switching Applications (Sanyo Semicon Device)
CPH6203 High-Current Switching Applications (Sanyo Semicon Device)
CPH6204 High-Current Switching Applications (Sanyo Semicon Device)
CPH6223 (CPH6123 / CPH6223) High-Current Switching Applications (Sanyo Semicon Device)
CPH6001 High-Frequency Low-Noise Amplifier Applications (Sanyo Semicon Device)
CPH6001A NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
CPH6001A RF Transistor (ON Semiconductor)
CPH6002 NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
CPH6003A NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
CPH6003A RF Transistor (ON Semiconductor)
