Part number:
ECH8306
Manufacturer:
Sanyo Semicon Device
File Size:
67.67 KB
Description:
P-channel silicon mosfet.
* General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Stora
ECH8306
Sanyo Semicon Device
67.67 KB
P-channel silicon mosfet.
📁 Related Datasheet
ECH8302 - P-Channel Silicon MOSFET
(Sanyo Semicon Device)
..
Ordering number : ENN8247
ECH8302
P-Channel Silicon MOSFET
ECH8302
Features
• •
General-Purpose Switching Device Applications.
ECH8304 - P-Channel Silicon MOSFET
(Sanyo Semicon Device)
..
Ordering number : ENN8255
ECH8304
P-Channel Silicon MOSFET
ECH8304
Features
• • •
General-Purpose Switching Device Applicatio.
ECH8305 - General-Purpose Switching Device
(Sanyo Semicon Device)
..
Ordering number : ENN8145
ECH8305
P-Channel Silicon MOSFET
ECH8305
Features
• •
General-Purpose Switching Device Applications.
ECH8308 - P-Channel Silicon MOSFET
(Sanyo Semicon Device)
.DataSheet.co.kr
Ordering number : ENA1182
ECH8308
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8308
Features
• • • •
General-.
ECH8308 - P-Channel Power MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET – Power, P-Channel, Single ECH8
-12 V, -10 A, 12.5 mW
ECH8308
Features
• Best Suited for Load Switching • 1.8 V Dr.
ECH8309 - P-Channel Silicon MOSFET
(Sanyo Semicon Device)
.DataSheet.co.kr
Ordering number : ENA1418A
ECH8309
SANYO Semiconductors
DATA SHEET
ECH8309
Features
• •
P-Channel Silicon MOSFET
General-Pu.
ECH8309 - P-Channel Power MOSFET
(ON Semiconductor)
Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
–12V, –9.5A, 16mΩ, Single ECH8
http://onsemi.
Features
• 1.8V drive • Halogen free .
ECH83 - Triode - Heptode 1957
(Philips)
page 1 2 3 4 5 6 7 8 9 10 11 12 13 14
ECH83 sheet 1 2 3 A B C D E F G H I J FP
date 1957.12.12 1957.12.12 1957.12.12 1958.10.10 1958.10.10 1958.10.1.
