* Low forward voltage (VF max=0.55V).
* Fast reverse recorvery time (trr max=10ns).
* Low switching noise.
* Low leakage current and high reliability due to highly reliable planar structure.
* Small-sized package, permitting SB07-015Capplied sets to be compact and slim. 1:Anode 2
SB07-015C Datasheet (51.69 KB)
SB07-015C
Sanyo Semicon Device
51.69 KB
15v/ 700ma rectifier.
Ordering number :EN4438A
SB07-015C
Shottky Barrier Diode
15V, 700mA Rectifier
Applications
* High frequency rectification (switching regulators,.
📁 Related Datasheet
SB07-03 - 30V/ 700mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN2981A
SB07-03P
Shottky Barrier Diode
30V, 700mA Rectifier
Applications
· High frequency rectification (switching regulators, conv.
SB07-03C - 30V/ 700mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN2997A
SB07-03C
Shottky Barrier Diode
30V, 700mA Rectifier
Applications
· High frequency rectification (switching regulators, conv.
SB07-03N - 30V/ 700mA Rectifier
(Sanyo Semicon Device)
Ordering number : EN2980A
Schottky Barrier Diode
SB07-03N
30V, 700mA Rectifier
Applications
• High frequency rectification (switching regulators, c.
SB07-03P - 30V/ 700mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN2981A
SB07-03P
Shottky Barrier Diode
30V, 700mA Rectifier
Applications
· High frequency rectification (switching regulators, conv.
SB07-03P - Schottky Barrier Diode
(ON Semiconductor)
Ordering number : EN2981C
SB07-03P
Schottky Barrier Diode
30V, 0.7A, Low IR, Single PCP
http://onsemi.
Applications
• High frequency rectificatio.
SB073P125-W-AG - Schottky Barrier Diode Wafer
(TRANSYS Electronics Limited)
SB073P125-W-Ag/Al
Schottky Barrier Diode Wafer 73 Mils, 125 Volt, 5 Amp
Data Sheet
Features
Oxide Passivated Junction Low Forward Voltage 150 º C Jun.
SB073P125-W-AL - Schottky Barrier Diode Wafer
(TRANSYS Electronics Limited)
SB073P125-W-Ag/Al
Schottky Barrier Diode Wafer 73 Mils, 125 Volt, 5 Amp
Data Sheet
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Oxide Passivated Junction Low Forward Voltage 150 º C Jun.
SB073P150-W-AG - Schottky Barrier Diode Wafer
(TRANSYS Electronics Limited)
SB073P150-W-Ag/Al
Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp
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Oxide Passivated Junction Low Forward Voltage 150 º C Jun.
