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SB073P200-W-AG

Schottky Barrier Diode Wafer

SB073P200-W-AG Features

* Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www.DataSheet4U.com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol

SB073P200-W-AG Datasheet (184.23 KB)

Preview of SB073P200-W-AG PDF

Datasheet Details

Part number:

SB073P200-W-AG

Manufacturer:

TRANSYS Electronics Limited

File Size:

184.23 KB

Description:

Schottky barrier diode wafer.

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TAGS

SB073P200-W-AG Schottky Barrier Diode Wafer TRANSYS Electronics Limited

SB073P200-W-AG Distributor