SB073P125-W-AG - Schottky Barrier Diode Wafer

TRANSYS Electronics Limited

Datasheet Details

Part number	SB073P125-W-AG
Manufacturer	TRANSYS Electronics Limited
File Size	184.38 KB
Description	Schottky Barrier Diode Wafer
Datasheet	SB073P125-W-AG_TRANSYSElectronicsLimited.pdf

Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www. DataSheet4U. com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Curr.

📁 SB073P125-W-AG Similar Datasheet

Other Datasheets by TRANSYS Electronics Limited

Published: Nov 7, 2008 |