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SB073P125-W-AG Schottky Barrier Diode Wafer

SB073P125-W-AG Description

SB073P125-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 125 Volt, 5 Amp Data Sheet .

SB073P125-W-AG Features

* Oxide Passivated Junction Low Forward Voltage 150 ยบ C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www. DataSheet4U. com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol

SB073P125-W-AG Applications

* do so at their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal fees either direct, incidental or consequential from this improper use or sale. Dimensions in mils (mm) Transys Electronics LTD Birmingham UK. Email: sales@transyselectronics. com Website: www. transyse

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Schottky Barrier Diode Wafer TRANSYS Electronics Limited
TRANSYS Electronics Limited SB073P125-W-AG-like datasheet