C3785
Features
- High DC current gain.
- Wide ASO.
- On-chip Zener diode of 60±10V between collector and base.
- Uniformity in collector-to-base breakdown voltage.
- Large inductive load handling capability.
Package Dimensions unit:mm
2043B
[2SC3785]
8.0 4.0
1.5 9.0 11.0
1.6 0.8
0.8 0.6
3.0 15.5
12 3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
Junction Temperature Storage Temperature
- : On-chip Zener diode (60±10V)
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.4 4.8
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
ICBO IEBO h FE f T VCE(sat) VBE(sat)
VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=1A IC=1A,...
