* Tj=150°C.
* Short reverse recovery time.
* Low switching noise.
* High reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current
SBT100-10G Datasheet (41.22 KB)
SBT100-10G
Sanyo
41.22 KB
Schottky barrier diode.
Ordering number : ENA0689
SBT100-10G
SANYO Semiconductors
DATA SHEET
SBT100-10G
Schottky Barrier Diode (Twin Type
* Cathode Common)
100V, 10A R.
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