2SC5564 - NPN TRANSISTOR

Sanyo Semicon Device

Datasheet Details

Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim.
High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2011 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colle.

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Published: Apr 3, 2005 |