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SBJ200-06J Schottky Barrier Diode

SBJ200-06J Description

Ordering number : ENA0193 SBJ200-06J SBJ200-06J Applications * High www.DataSheet4U.com Schottky Barrier Diode (Twin Type * Cathode Com.

SBJ200-06J Features

* Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at

SBJ200-06J Applications

* High www. DataSheet4U. com Schottky Barrier Diode (Twin Type

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Datasheet Details

Part number
SBJ200-06J
Manufacturer
Sanyo Semicon Device
File Size
66.90 KB
Datasheet
SBJ200-06J_SanyoSemiconDevice.pdf
Description
Schottky Barrier Diode

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Schottky Barrier Diode Sanyo Semicon Device
Sanyo Semicon Device SBJ200-06J-like datasheet