BD900A Datasheet, Transistor, SavantIC

PDF File Details

Part number:

BD900A

Manufacturer:

SavantIC

File Size:

128.51kb

Download:

📄 Datasheet

Description:

Silicon power transistor.

BD900A Application

• Applications
• For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Coll

TAGS

📁 Related Datasheet

BD900 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor BD900 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hF.

BD900 - PNP Transistor (Power Innovations Limited)
BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed.

BD900 - (BD900 / BD902) SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package .. ·Complement to type.

BD900 - Silicon NPN Power Transistors (Comset Semiconductors)
SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit a.

BD9001F - Flexible Step-Down Switching Regulator (Rohm)
Rcaflga_j Lmrc Single-chip Type with built-in FET Switching Regulator Series Flexible Step-down Switching Regulators with Built-in Power MOSFET BD977.

BD9002HFP - Flexible Step-Down Switching Regulator (Rohm)
.. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri.

BD900A - PNP Transistor (Power Innovations Limited)
BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for.

BD900A - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : h.

BD901 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(.

BD901 - NPN Transistor (Bourns Electronic Solutions)
.. BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD896, BD898, BD900 and BD.