* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min.
SSRF04N65SL Datasheet (557.35 KB)
SSRF04N65SL
SeCoS Halbleitertechnologie
557.35 KB
N-channel mosfet.
SSRF04N65SL Elektronische Bauelemente 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
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