* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source ITO-220 BN MA D E H JC K LL G F REF. A B C D E F G Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2
SSRF04N60SL Datasheet (493.07 KB)
SSRF04N60SL
SeCoS
493.07 KB
N-channel mosfet.
Elektronische Bauelemente SSRF04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .
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