* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min.
SSRF12N65SL Datasheet (544.30 KB)
SSRF12N65SL
SeCoS Halbleitertechnologie
544.30 KB
N-channel mosfet.
SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
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