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2SD1619 - PNP Silicon Medium Power Transistor

2SD1619 Description

2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 .

2SD1619 Features

*     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e

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Datasheet Details

Part number
2SD1619
Manufacturer
SeCoS
File Size
158.52 KB
Datasheet
2SD1619_SeCoS.pdf
Description
PNP Silicon Medium Power Transistor

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PNP Silicon Medium Power Transistor SeCoS
SeCoS 2SD1619-like datasheet