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2SD669 Datasheet - SeCoS

2SD669 NPN Transistor

2SD669 Features

* Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2

2SD669-SeCoS.pdf

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Datasheet Details

Part number:

2SD669

Manufacturer:

SeCoS

File Size:

231.48 KB

Description:

Npn transistor.

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2SD669 2SD669 NPN Transistor SeCoS

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