* Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2
2SD669
SeCoS
231.48 KB
Npn transistor.
2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-.
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