2SD669
SeCoS
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Npn transistor.
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2SD661 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.
2SD661 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.
2SD661A - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: .
2SD661A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: .
2SD662 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2..
2SD662 - Silicon NPN Transistor
(Panasonic Semiconductor)
..net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplificati.
2SD662B - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2..
2SD662B - Silicon NPN Transistor
(Panasonic Semiconductor)
..net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplificati.
2SD663 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD663
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 500V(Min) ·.
2SD664 - NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3.