* The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SDT4A6N10ESV-C meet the RoHS and Green Product requirement with full function reliability appro
SDT4A6N10ESV-C Datasheet (536.81 KB)
SDT4A6N10ESV-C
SeCoS
536.81 KB
N-ch enhancement mode power mosfet.
Elektronische Bauelemente
SDT4A6N10ESV-C
4.6A, 100V, RDS(ON) 59mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifi.
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