SM260FL
SeCoS
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Schottky barrier rectifiers.
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SM260 - TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
(Dc Components)
..
DC COMPONENTS CO., LTD.
R
SM220 THRU SM260
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RE.
SM2601PSC - P-Channel MOSFET
(Sinopower)
SM2601PSC
Features
• -20V/-7.3A ,
RDS(ON)=26mΩ (Max.) @ VGS=-4.5V
RDS(ON)=38mΩ (Max.) @ VGS=-2.5V
RDS(ON)=58mΩ
(Max.)
@
V =-1.8V GS
• Reliabl.
SM2602NSC - N-Channel MOSFET
(Sinopower)
SM2602NSC
®
N-Channel Enhancement Mode MOSFET
Features
• 20V/6.2A,
RDS(ON)= 24mΩ(max.) @ VGS=4.5V RDS(ON)= 32mΩ(max.) @ VGS=2.5V
• Reliable and Rugg.
SM2604NSC - N-Channel MOSFET
(Sinopower)
SM2604NSC
®
N-Channel Enhancement Mode MOSFET
Features
• 30V/7.4A,
RDS(ON)= 24mΩ(max.) @ VGS=10V RDS(ON)= 32.5mΩ(max.) @ VGS=4.5V
• Reliable and Rug.
SM2605PSC - P-Channel MOSFET
(Sinopower)
SM2605PSC
Features
• -30V/-7.5A,
RDS(ON) = 30mΩ(max.) @ VGS =-10V RDS(ON) = 45mΩ(max.) @ VGS =-4.5V
• Reliable and Rugged • Lead Free and Green Device.
SM2607CSC - MOSFET
(Sinopower)
SM2607CSC
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
• N-Channel
20V/5A,
RDS(ON)=38mΩ(max.)
@
V =4.5V GS
RDS(ON)=54mΩ(max.) @ .
SM2608NSC - N-Channel MOSFET
(Sinopower)
SM2608NSC
®
N-Channel Enhancement Mode MOSFET
Features
• 30V/7.4A,
RDS(ON)= 17mΩ(max.) @ VGS=10V RDS(ON)= 21.5mΩ(max.) @ VGS=4.5V
• Reliable and Rug.
SM2609PSC - P-Channel MOSFET
(Sinopower)
SM2609PSC
Features
• -30V/-4A,
RDS(ON) = 85mΩ(max.) @ VGS =-10V RDS(ON) = 135mΩ(max.) @ VGS =-4.5V
• Reliable and Rugged • Lead Free and Green Devices.
SM260A - Schottky Barrier Rectifiers
(Leshan Radio Company)
SM220A thru SM2100A
FEATURES
Schottky Barrier Rectifiers Reverse Voltage 20 to100V
* Plastic package has Underwriters Laboratory
Flammability Clas.
SM260A - 2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
(GW)
SM220A THRU SM2100A
2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
FEATURES
* Ideal for surface mount applications * Easy pick and place * Built-.
