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SMG2306A N-Channel MosFET

SMG2306A Description

Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifi.
The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

SMG2306A Features

* z Capable of 2.5V gate drive z Lower on-resistance PACKAGE DIMENSIONS A L B Top View C F G H E D (Typ. ) Drain Gate Source K J M REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20

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Datasheet Details

Part number
SMG2306A
Manufacturer
SeCoS
File Size
1.00 MB
Datasheet
SMG2306A-SeCoS.pdf
Description
N-Channel MosFET

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N-Channel MosFET SeCoS
SeCoS SMG2306A-like datasheet