* z Capable of 2.5V gate drive z Lower on-resistance PACKAGE DIMENSIONS A L B Top View C F G H E D (Typ.) Drain Gate Source K J M REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20
SMG2306A
SeCoS
1.00 MB
N-channel mosfet.
Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifi.
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