SMG2329P P-Channel MosFET

SeCoS

Description

Elektronische Bauelemente SMG2329P -2.5 A, -30 V, RDS(ON) 0.112  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissip.

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Datasheet Specifications

Part number: SMG2329P
Manufacturer: SeCoS
File Size: 117.54 KB
Datasheet: SMG2329P-SeCoS.pdf
Description: P-Channel MosFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SC-59 saves board space.
* Fast switching speed.
* High performance trench technology. K F SC-59 A L 3 Top View 1 E 2 CB 1 D G H 3 2 J PRODUCT SUMMARY PRODUCT SUMMA

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SMG2329P P-Channel MosFET SeCoS

SeCoS SMG2329P-like datasheet