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SMG2358N N-Channel MosFET

SMG2358N Description

Elektronische Bauelemente SMG2358N 3.1 A, 60 V, RDS(ON) 92 mļ— N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies h.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

SMG2358N Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SC-59 saves board space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View

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Datasheet Details

Part number
SMG2358N
Manufacturer
SeCoS
File Size
490.03 KB
Datasheet
SMG2358N-SeCoS.pdf
Description
N-Channel MosFET

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N-Channel MosFET SeCoS
SeCoS SMG2358N-like datasheet