SMG2358N N-Channel MosFET

SeCoS

Description

Elektronische Bauelemente SMG2358N 3.1 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies h.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SMG2358N
Manufacturer: SeCoS
File Size: 490.03 KB
Datasheet: SMG2358N-SeCoS.pdf
Description: N-Channel MosFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SC-59 saves board space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View

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SMG2358N N-Channel MosFET SeCoS

SeCoS SMG2358N-like datasheet