SMG351AN Datasheet - SeCoS

SMG351AN N-Channel MOSFET

The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 3 Top View SC-59 B 1 Dim A B C D J K Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.1.

SMG351AN Features

* Lower Gate Charge

* Small Package Outline H Drain Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and

SMG351AN Datasheet (522.74 KB)