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SMS3110-C - N-Ch Enhancement Mode Power MOSFET

SMS3110-C Description

Elektronische Bauelemente SMS3110-C 1.2A, 100V, RDS(ON) 310mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies h.
The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

SMS3110-C Features

* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF.

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Datasheet Details

Part number
SMS3110-C
Manufacturer
SeCoS
File Size
434.22 KB
Datasheet
SMS3110-C-SeCoS.pdf
Description
N-Ch Enhancement Mode Power MOSFET

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N-Ch Enhancement Mode Power MOSFET SeCoS
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