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SMS3110-C Datasheet - SeCoS

N-Ch Enhancement Mode Power MOSFET

SMS3110-C Features

* Advanced High Cell Density Trench Technology

* Super Low Gate Charge

* Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF.

SMS3110-C General Description

The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3110-C meet the RoHS and Green Product Requirement with full function reliability ap.

SMS3110-C Datasheet (434.22 KB)

Preview of SMS3110-C PDF

Datasheet Details

Part number:

SMS3110-C

Manufacturer:

SeCoS

File Size:

434.22 KB

Description:

N-ch enhancement mode power mosfet.
Elektronische Bauelemente SMS3110-C 1.2A, 100V, RDS(ON) 310mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies h.

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SMS3110-C N-Ch Enhancement Mode Power MOSFET SeCoS

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