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SSE133N12S-C N-Channel Shielded Gate Trench Power MOSFET

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Description

Elektronische Bauelemente SSE133N12S-C 133A, 120V, RDS(ON) 7mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” s.
The SSE133N12S-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number
SSE133N12S-C
Manufacturer
SeCoS
File Size
350.57 KB
Datasheet
SSE133N12S-C-SeCoS.pdf
Description
N-Channel Shielded Gate Trench Power MOSFET

Features

* Shielded Gate Trench Technology
* Super Low Gate Charge
* Green Device Available MARKING 133N12S  = Date Code ORDER INFORMATION Part Number Type 1 Gate SSE133N12S-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22

SSE133N12S-C Distributors

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N-Channel Shielded Gate Trench Power MOSFET SeCoS
SeCoS SSE133N12S-C-like datasheet