SSE4N60 N-Channel Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie

Description

SSE4N60 Elektronische Bauelemente 4.1A, 600 V, RDS(ON) 2.5 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.
The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: SSE4N60
Manufacturer: SeCoS Halbleitertechnologie
File Size: 726.55 KB
Datasheet: SSE4N60-SeCoSHalbleitertechnologie.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22

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SSE4N60 N-Channel Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie

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