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SSE4N60

N-Channel Enhancement Mode Power MOSFET

SSE4N60 Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22

SSE4N60 General Description

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suit.

SSE4N60 Datasheet (726.55 KB)

Preview of SSE4N60 PDF

Datasheet Details

Part number:

SSE4N60

Manufacturer:

SeCoS Halbleitertechnologie

File Size:

726.55 KB

Description:

N-channel enhancement mode power mosfet.
SSE4N60 Elektronische Bauelemente 4.1A, 600 V, RDS(ON) 2.5 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.

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SSE4N60 N-Channel Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie

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