SSE04N65SL N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSE04N65SL 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for mos.

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Datasheet Specifications

Part number: SSE04N65SL
Manufacturer: SeCoS
File Size: 552.25 KB
Datasheet: SSE04N65SL-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L

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SSE04N65SL N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSE04N65SL-like datasheet