SSE07N80SL Datasheet - SeCoS

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SSE07N80SL N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SSE07N80SL 7A , 800V , RDS(ON) 1.6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSE07N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for mos.

SSE07N80SL-SeCoS.pdf

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Datasheet Details

Part number:

SSE07N80SL

Manufacturer:

SeCoS

File Size:

562.01 KB

Description:

N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L

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SSE07N80SL N-Ch Enhancement Mode Power MOSFET SeCoS

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