SSESD11B Datasheet - ON Semiconductor

SSESD11B Transient Voltage Suppressors

of survivability specs. © Semiconductor Components Industries, LLC, 2015 September, 2015 * Rev. 1 1 Publication Order Number: SSESD11B/D SSESD11B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage.

SSESD11B Features

* Low Capacitance 12 pF

* Low Clamping Voltage

* Small Body Outline Dimensions: 0.60 mm x 0.30 mm

* Low Body Height: 0.3 mm

* Stand

* off Voltage: 5.0 V

* Low Leakage

* Response Time is < 1 ns

* IEC61000

* 4

* 2 Level

SSESD11B Datasheet (79.61 KB)

SSESD11B Datasheet Preview — Preview of SSESD11B PDF

Datasheet Details

Part number:

SSESD11B

Manufacturer:

ON Semiconductor ↗

File Size:

79.61 KB

Description:

Transient voltage suppressors.

📁 Related Datasheet

SSESD03 Transient Voltage Suppressors (SeCoS)

SSESD03C Transient Voltage Suppressors (SeCoS)

SSESD05 Transient Voltage Suppressors (SeCoS)

SSESD05C Transient Voltage Suppressors (SeCoS)

SSESDL05-C Ultra-Low Capacitance ESD Protection (SeCoS)

SSE04N60SL N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSE04N65SL N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSE07N80SL N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSE08N60SL N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSE102N10SV-C N-Channel Enhancement Mode Power MosFET (SeCoS)

TAGS

SSESD11B Transient Voltage Suppressors ON Semiconductor

Image Gallery

SSESD11B Distributor