SSE04N60SL - N-Ch Enhancement Mode Power MOSFET

SeCoS

SSE04N60SL Datasheet Preview — Preview of SSE04N60SL PDF

Datasheet Details

Part number	SSE04N60SL
Manufacturer	SeCoS
File Size	561.63 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSE04N60SL-SeCoS.pdf

SSE04N60SL Product details

Description

The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45.

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Published: Apr 4, 2016 |