SSE04N60SL Datasheet - SeCoS

SSE04N60SL, N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for mos.

datasheet Preview Page 1 from Datasheet4u.com

SSE04N60SL-SeCoS.pdf

SSE04N60SL Datasheet Preview — Preview of SSE04N60SL PDF

Datasheet Details

Part number:

SSE04N60SL

Manufacturer:

SeCoS

File Size:

561.63 KB

Description:

N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimet

SSE04N60SL Distributors

📁 Related Datasheet

SSE16020 SSE4N60 SSEMI4184MU SSEPAA5-02N SSEPAA5-02S SSESD11B

📌 All Tags

SSE04N60SL N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSE04N60SL-like datasheet