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SSE08N60SL Datasheet - SeCoS

N-Ch Enhancement Mode Power MOSFET

SSE08N60SL Features

* 8A, 600V, RDS(ON)(TYP.)=0.96Ω@VGS=10V Low Gate Charge Low Crss Fast Switching Improved dv/dt Capability 1 Gate 2 Drain 3 Source TO-220P REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9

SSE08N60SL General Description

The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved planar strip cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

SSE08N60SL Datasheet (276.13 KB)

Preview of SSE08N60SL PDF

Datasheet Details

Part number:

SSE08N60SL

Manufacturer:

SeCoS

File Size:

276.13 KB

Description:

N-ch enhancement mode power mosfet.
Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.

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