SSE08N60SL N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced.

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Datasheet Specifications

Part number: SSE08N60SL
Manufacturer: SeCoS
File Size: 276.13 KB
Datasheet: SSE08N60SL-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* 8A, 600V, RDS(ON)(TYP. )=0.96Ω@VGS=10V Low Gate Charge Low Crss Fast Switching Improved dv/dt Capability 1 Gate 2 Drain 3 Source TO-220P REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9

SSE08N60SL Distributors

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SSE08N60SL N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSE08N60SL-like datasheet