SSG4362N N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSG4362N 18.6 A, 30 V, RDS(ON) 6 m N-Ch Enhancement Mode Power MOSFET .
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SSG4362N
Manufacturer: SeCoS
File Size: 504.98 KB
Datasheet: SSG4362N-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SOP-8 saves board space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch MAXIMUM RATINGS (TA

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SSG4362N N-Ch Enhancement Mode Power MOSFET SeCoS

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