SSG4490N N-Channel Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET .
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SSG4490N
Manufacturer: SeCoS
File Size: 144.47 KB
Datasheet: SSG4490N-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SOIC-8 saves board space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch SOP-8 B A HG LD

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SSG4490N N-Channel Enhancement Mode Power MOSFET SeCoS

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