SSI318-C Dual N-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSI318-C 0.25A, 50V, RDS(ON) 1.6Ω Dual N-Channel ENHANCEMENT MODE POWER MOSFET RoHS Compliant Product A Suffix of “-C” spe.
The SSI318-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number: SSI318-C
Manufacturer: SeCoS
File Size: 470.45 KB
Datasheet: SSI318-C-SeCoS.pdf
Description: Dual N-Channel MOSFET

Features

* Reliable and Rugged Green Device Available ESD Protection MARKING 318 PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch J D CF GH E REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0

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SSI318-C Dual N-Channel MOSFET SeCoS

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