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SSI2007 Datasheet - SeCoS

Datasheet Details

Part number:

SSI2007

Manufacturer:

SeCoS

File Size:

1.09 MB

Description:

Power MOSFET

Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.

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SSI2007-SeCoS.pdf

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SSI2007, Power MOSFET

The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

MECHANICAL DATA Trench Technology Supper high densi

SSI2007 Distributor

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