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SSI2007 Datasheet - SeCoS

SSI2007 Power MOSFET

The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high densi.

SSI2007-SeCoS.pdf

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Datasheet Details

Part number:

SSI2007

Manufacturer:

SeCoS

File Size:

1.09 MB

Description:

Power mosfet.

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