SSI2007

Power MOSFET

SeCoS

SSI2007 General Description

The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high densi.

SSI2007 Datasheet (1.09 MB)

SSI2007 Datasheet Preview — Preview of SSI2007 PDF

Datasheet Details

Part number:

SSI2007

Manufacturer:

SeCoS

File Size:

1.09 MB

Description:

Power mosfet.
Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Com.

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SSI2007 Power MOSFET SeCoS

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SSI2007 General Description

Datasheet Details

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