Datasheet4U Logo Datasheet4U.com

SSI2N60B Datasheet - Fairchild Semiconductor

SSI2N60B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSI2N60B Features

* 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK SSW Series G D S I2-PAK SSI

SSI2N60B_FairchildSemiconductor.pdf

Preview of SSI2N60B PDF
SSI2N60B Datasheet Preview Page 2 SSI2N60B Datasheet Preview Page 3

Datasheet Details

Part number:

SSI2N60B

Manufacturer:

Fairchild Semiconductor

File Size:

673.79 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SSI2N80A Advanced Power MOSFET (Fairchild Semiconductor)

SSI2007 Power MOSFET (SeCoS)

SSI2007 N- and P-Channel 20V MOSFET (VBsemi)

SSI204 LOW POWER DTMF RECEIVER (Silicon Systems)

SSI2085E-C N & P-Ch Enhancement Mode Power MOSFET (SeCoS)

SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSI2154 800mA 20V Dual N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSI263A Phoneme Speech synthesizer (Silicon Systems)

TAGS

SSI2N60B SSI2N60B N-Channel MOSFET Fairchild Semiconductor

SSI2N60B Distributor