Datasheet Details
Part number:
SSI2N60B
Manufacturer:
Fairchild Semiconductor
File Size:
673.79 KB
Description:
N-Channel MOSFET
Features
* 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI
SSI2N60B_FairchildSemiconductor.pdf
SSI2N60B, N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a
SSI2N60B Distributor
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