SSI2N60B - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSI2N60B
Manufacturer	Fairchild ↗ Semiconductor
File Size	673.79 KB
Description	N-Channel MOSFET
Datasheet	SSI2N60B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Conti.

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Published: Nov 20, 2006 |