Part number:
SSI2N80A
Manufacturer:
Fairchild Semiconductor
File Size:
290.05 KB
Description:
Advanced power mosfet.
SSI2N80A Datasheet (290.05 KB)
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.
SSI2N80A Datasheet (290.05 KB)
SSI2N80A
Fairchild Semiconductor
290.05 KB
Advanced power mosfet.
📁 Related Datasheet
SSI2N60B - N-Channel MOSFET
(Fairchild Semiconductor)
..
SSW2N60B / SSI2N60B
November 2001
SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mod.
SSI2007 - Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI2007
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS Com.
SSI204 - LOW POWER DTMF RECEIVER
(Silicon Systems)
..
.
SSI2085E-C - N & P-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI2085E-C
-Ch: 0.56A, 20V, RDS(O ) 450mΩ P-Ch: -0.5A, -20V, RDS(O ) 900mΩ & P-Ch Enhancement Mode Power MOSFET
RoHS Compl.
SSI20N5E-C - Dual N-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI20N5E-C
0.56A, 20V, RDS(ON) 450mΩ Dual N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” speci.
SSI2154 - 800mA 20V Dual N-Channel MOSFET
(SeCoS Halbleitertechnologie)
SSI2154
Elektronische Bauelemente 800mA, 20V Dual N-Channel MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION.
SSI263A - Phoneme Speech synthesizer
(Silicon Systems)
..
.
SSI10N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSW10N60B / SSI10N60B
November 2001
SSW10N60B / SSI10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field eff.
