SSI2N80A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSI2N80A
Manufacturer	Fairchild ↗ Semiconductor
File Size	290.05 KB
Description	Advanced Power MOSFET
Datasheet	SSI2N80A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ. ) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (.

📁 SSI2N80A Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Jan 11, 2007 |