Datasheet Details
Part number:
SSI10N60B
Manufacturer:
Fairchild Semiconductor
File Size:
723.13 KB
Description:
600V N-Channel MOSFET
Features
* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI Ser
SSI10N60B_FairchildSemiconductor.pdf
SSI10N60B, 600V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e
SSI10N60B Distributor
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