SSI1N60B - 600V N-Channel MOSFET

Fairchild Semiconductor

SSI1N60B Datasheet Preview — Preview of SSI1N60B PDF

Datasheet Details

Part number	SSI1N60B
Manufacturer	Fairchild ↗ Semiconductor
File Size	644.64 KB
Description	600V N-Channel MOSFET
Datasheet	SSI1N60B_FairchildSemiconductor.pdf

SSI1N60B Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

Features

1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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Published: Aug 19, 2008 |