Datasheet Details
Part number:
SSI1N60B
Manufacturer:
Fairchild Semiconductor
File Size:
644.64 KB
Description:
600V N-Channel MOSFET
Features
* 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! !
SSI1N60B_FairchildSemiconductor.pdf
SSI1N60B, 600V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e
SSI1N60B Distributor
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