Part number:
SSI1N50B
Manufacturer:
Fairchild Semiconductor
File Size:
635.97 KB
Description:
520v n-channel mosfet.
* 1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI S
SSI1N50B Datasheet (635.97 KB)
SSI1N50B
Fairchild Semiconductor
635.97 KB
520v n-channel mosfet.
📁 Related Datasheet
SSI1N60A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
..
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω I.
SSI1N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSW1N60B / SSI1N60B
November 2001
SSW1N60B / SSI1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
SSI10N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSW10N60B / SSI10N60B
November 2001
SSW10N60B / SSI10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field eff.
SSI122 - 4-Channel Thin Film Read/Write Device
(Silicon Systems)
..
.
DataShee
.
DataSheet 4 U .
..
et4U.
.
DataShee
DataShe.
SSI2007 - Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI2007
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS Com.
SSI204 - LOW POWER DTMF RECEIVER
(Silicon Systems)
..
.
SSI2085E-C - N & P-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI2085E-C
-Ch: 0.56A, 20V, RDS(O ) 450mΩ P-Ch: -0.5A, -20V, RDS(O ) 900mΩ & P-Ch Enhancement Mode Power MOSFET
RoHS Compl.
SSI20N5E-C - Dual N-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI20N5E-C
0.56A, 20V, RDS(ON) 450mΩ Dual N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” speci.