SSI1N50B 520V N-Channel MOSFET

Fairchild Semiconductor

Description

SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.

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Datasheet Specifications

Part number: SSI1N50B
Manufacturer: Fairchild Semiconductor
File Size: 635.97 KB
Datasheet: SSI1N50B_FairchildSemiconductor.pdf
Description: 520V N-Channel MOSFET

Features

* 1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI S

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SSI1N50B 520V N-Channel MOSFET Fairchild Semiconductor

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