Datasheet Details
Part number:
SSI1N50B
Manufacturer:
Fairchild Semiconductor
File Size:
635.97 KB
Description:
520V N-Channel MOSFET
Features
* 1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI S
SSI1N50B_FairchildSemiconductor.pdf
SSI1N50B, 520V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e
SSI1N50B Distributor
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