SSI20N5E-C Datasheet - SeCoS

SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET

The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI20N5E-C meet the RoHS and Green Product requirement with full function reliability appro.

SSI20N5E-C Features

* Advanced High Cell Density Trench Technology

* Super Low Gate Charge

* Green Device Available MARKING 20N5E PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch SOT-563 REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F

SSI20N5E-C-SeCoS.pdf