SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSI20N5E-C 0.56A, 20V, RDS(ON) 450mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” speci.
The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge fo.

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Datasheet Specifications

Part number: SSI20N5E-C
Manufacturer: SeCoS
File Size: 471.17 KB
Datasheet: SSI20N5E-C-SeCoS.pdf
Description: Dual N-Ch Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Green Device Available MARKING 20N5E PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch SOT-563 REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F

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SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET SeCoS

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