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SSI20N5E-C

Dual N-Ch Enhancement Mode Power MOSFET

SSI20N5E-C Features

* Advanced High Cell Density Trench Technology

* Super Low Gate Charge

* Green Device Available MARKING 20N5E PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch SOT-563 REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F

SSI20N5E-C General Description

The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI20N5E-C meet the RoHS and Green Product requirement with full function reliability appro.

SSI20N5E-C Datasheet (471.17 KB)

Preview of SSI20N5E-C PDF

Datasheet Details

Part number:

SSI20N5E-C

Manufacturer:

SeCoS

File Size:

471.17 KB

Description:

Dual n-ch enhancement mode power mosfet.
Elektronische Bauelemente SSI20N5E-C 0.56A, 20V, RDS(ON) 450mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” speci.

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SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET SeCoS

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