SSI20N5E-C
SeCoS
471.17kb
Dual n-ch enhancement mode power mosfet. The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) a
TAGS
📁 Related Datasheet
SSI2007 - Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI2007
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS Com.
SSI204 - LOW POWER DTMF RECEIVER
(Silicon Systems)
..
.
SSI2085E-C - N & P-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSI2085E-C
-Ch: 0.56A, 20V, RDS(O ) 450mΩ P-Ch: -0.5A, -20V, RDS(O ) 900mΩ & P-Ch Enhancement Mode Power MOSFET
RoHS Compl.
SSI2154 - 800mA 20V Dual N-Channel MOSFET
(SeCoS Halbleitertechnologie)
SSI2154
Elektronische Bauelemente 800mA, 20V Dual N-Channel MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION.
SSI263A - Phoneme Speech synthesizer
(Silicon Systems)
..
.
SSI2N60B - N-Channel MOSFET
(Fairchild Semiconductor)
..
SSW2N60B / SSI2N60B
November 2001
SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mod.
SSI2N80A - Advanced Power MOSFET
(Fairchild Semiconductor)
..
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
SSI10N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSW10N60B / SSI10N60B
November 2001
SSW10N60B / SSI10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field eff.
SSI122 - 4-Channel Thin Film Read/Write Device
(Silicon Systems)
..
.
DataShee
.
DataSheet 4 U .
..
et4U.
.
DataShee
DataShe.
SSI1N50B - 520V N-Channel MOSFET
(Fairchild Semiconductor)
SSW1N50B / SSI1N50B
SSW1N50B / SSI1N50B
520V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are.