* Super Low Gate Charge Advanced high cell density Trench technology Green Device Available MARKING 5A2P15 = Date code REF. A B C D E F Millimeter Min. Max. 3.20 3.40 3.00 3.25 3.20 3.45 3.00 3.20 0.65 BSC. 2.39 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.98 0.24 0.35 0.35TYP. 0.60TYP. 0.
SSPR5A2P15 Datasheet (622.78 KB)
SSPR5A2P15
SeCoS
622.78 KB
P-channel enhancement mode power mosfet.
Elektronische Bauelemente
SSPR5A2P15
-5.2A , -150V , RDS(O ) 780 mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” .
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