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SSP10N60A - Advanced Power MOSFET

SSP10N60A Description

Advanced Power MOSFET .

SSP10N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ. ) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSP10N60A-like datasheet