Datasheet4U Logo Datasheet4U.com

SSP2N60A

Advanced Power MOSFET

SSP2N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2 A TO-220 1.Gate 2. Drain 3. Source

SSP2N60A Datasheet (444.91 KB)

Preview of SSP2N60A PDF

Datasheet Details

Part number:

SSP2N60A

Manufacturer:

Fairchild Semiconductor

File Size:

444.91 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSP2N60B 600V N-Channel MOSFET (Fairchild Semiconductor)

SSP2N90A Advanced Power MOSFET (Fairchild Semiconductor)

SSP20N60S 600V N-Channel MOSFET (Super Semiconductor)

SSP-T Surface Mount Quartz Crystal (ETC)

SSP-T5 Surface Mount Quartz Crystal (ETC)

SSP-T7-F SMD Quartz Crystal (Seiko)

SSP-T7-FL SMD Quartz Crystal (Seiko)

SSP0430A-800480 SPI TFT LCD Module (Surenoo)

SSP100 (SSP80 / SSP100) Surround Sound Processor Manual (HALCRO)

SSP10N60A Advanced Power MOSFET (Fairchild Semiconductor)

TAGS

SSP2N60A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSP2N60A Datasheet Preview Page 2 SSP2N60A Datasheet Preview Page 3

SSP2N60A Distributor