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SSP2N60B - 600V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: SSP2N60B
Manufacturer: Fairchild Semiconductor
File Size: 1.03 MB
Datasheet: SSP2N60B_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

SSP2N60B Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS Series DataShee S DataSheet4U. com Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC =.

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Published: Sep 16, 2006